文献
J-GLOBAL ID:201702241114679491
整理番号:17A0965953
作業記憶のための電圧制御MRAM:展望と課題【Powered by NICT】
Voltage-controlled MRAM for working memory: Perspectives and challenges
著者 (4件):
Kang Wang
(Fert Beijing Research Institute, BDBC, School of Electronic and Information Engineering, Beihang University, Beijing, 100191, China)
,
Chang Liang
(Fert Beijing Research Institute, BDBC, School of Electronic and Information Engineering, Beihang University, Beijing, 100191, China)
,
Zhang Youguang
(Fert Beijing Research Institute, BDBC, School of Electronic and Information Engineering, Beihang University, Beijing, 100191, China)
,
Zhao Weisheng
(Fert Beijing Research Institute, BDBC, School of Electronic and Information Engineering, Beihang University, Beijing, 100191, China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
DATE
ページ:
542-547
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)