文献
J-GLOBAL ID:201702241145029581
整理番号:17A0402806
垂直自立GaPナノワイヤ上でのコンパクトGaドープZnO層の形成【Powered by NICT】
Formation of a compact Ga-doped ZnO layer over vertical free-standing GaP nanowires
著者 (9件):
Laurencikova A.
(Institute of Electrical Engineering, SAS, Dubravska Cesta 9, 841 04 Bratislava, Slovakia)
,
Novotny I.
(Slovak University of Technology, Institute of Microelectronics and Photonics, Ilkovicova 3, 812 19 Bratislava, Slovakia)
,
Hasenohrl S.
(Institute of Electrical Engineering, SAS, Dubravska Cesta 9, 841 04 Bratislava, Slovakia)
,
Derer J.
(Institute of Electrical Engineering, SAS, Dubravska Cesta 9, 841 04 Bratislava, Slovakia)
,
Elias P.
(Institute of Electrical Engineering, SAS, Dubravska Cesta 9, 841 04 Bratislava, Slovakia)
,
Kovac J.
(Slovak University of Technology, Institute of Microelectronics and Photonics, Ilkovicova 3, 812 19 Bratislava, Slovakia)
,
Kovac J.
(Slovak University of Technology, Institute of Microelectronics and Photonics, Ilkovicova 3, 812 19 Bratislava, Slovakia)
,
Dobrocka E.
(Institute of Electrical Engineering, SAS, Dubravska Cesta 9, 841 04 Bratislava, Slovakia)
,
Novak J.
(Institute of Electrical Engineering, SAS, Dubravska Cesta 9, 841 04 Bratislava, Slovakia)
資料名:
Applied Surface Science
(Applied Surface Science)
巻:
395
ページ:
162-165
発行年:
2017年
JST資料番号:
B0707B
ISSN:
0169-4332
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)