文献
J-GLOBAL ID:201702241187500858
整理番号:17A0749440
過渡熱プロービングエレクトロニクスにおけるスマート分子利用三進メモリデバイスの応用【Powered by NICT】
The Application of a Small-Molecule-Based Ternary Memory Device in Transient Thermal-Probing Electronics
著者 (8件):
Zhou Feng
(College of Chemistry Chemical Engineering and Materials Science, Collaborative Innovation, Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, China)
,
Wu Bin
(College of Chemistry Chemical Engineering and Materials Science, Collaborative Innovation, Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, China)
,
Dong Hui-Long
(Institute of Functional Nano & Soft Materials Laboratory (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China)
,
Xu Qing-Feng
(College of Chemistry Chemical Engineering and Materials Science, Collaborative Innovation, Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, China)
,
He Jing-Hui
(College of Chemistry Chemical Engineering and Materials Science, Collaborative Innovation, Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, China)
,
Li You-Yong
(Institute of Functional Nano & Soft Materials Laboratory (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, 215123, China)
,
Jiang Jun
(College of Chemistry Chemical Engineering and Materials Science, Collaborative Innovation, Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, China)
,
Lu Jian-Mei
(College of Chemistry Chemical Engineering and Materials Science, Collaborative Innovation, Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, China)
資料名:
Advanced Materials
(Advanced Materials)
巻:
29
号:
5
ページ:
ROMBUNNO.201604162
発行年:
2017年
JST資料番号:
W0001A
ISSN:
0935-9648
CODEN:
ADVMEW
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)