文献
J-GLOBAL ID:201702241987547553
整理番号:17A0181116
直接結合されたInP/SiO-2/Si基板上にエピタキシャル成長させたIII-V活性層を用いた不均一集積レーザ【Powered by NICT】
Heterogeneously integrated lasers using epitaxially grown III-V active layer on directly bonded InP/SiO2/Si substrate
著者 (8件):
Fujii Takuro
(NTT Device Technology Labs., NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan)
,
Takeda Koji
(NTT Device Technology Labs., NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan)
,
Kanno Erina
(NTT Device Technology Labs., NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan)
,
Hasebe Koichi
(NTT Device Technology Labs., NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan)
,
Nishi Hidetaka
(NTT Device Technology Labs., NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan)
,
Yamamoto Tsuyoshi
(NTT Device Technology Labs., NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan)
,
Kakitsuka Takaaki
(NTT Device Technology Labs., NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan)
,
Matsuo Shinji
(NTT Device Technology Labs., NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
IPC
ページ:
540-541
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)