文献
J-GLOBAL ID:201702242343768997
整理番号:17A1545011
MOSキャパシタの電荷捕獲の2次シグマ-デルタ制御【Powered by NICT】
Second order sigma-delta control of charge trapping for MOS capacitors
著者 (4件):
Bheesayagari C.
(Micro and Nano Technologies Group, Electronic Engineering Department, Universitat Politecnica de Catalunya, Jordi Girona 1-3, 08034 Barcelona, Spain)
,
Gorreta S.
(Micro and Nano Technologies Group, Electronic Engineering Department, Universitat Politecnica de Catalunya, Jordi Girona 1-3, 08034 Barcelona, Spain)
,
Pons-Nin J.
(Micro and Nano Technologies Group, Electronic Engineering Department, Universitat Politecnica de Catalunya, Jordi Girona 1-3, 08034 Barcelona, Spain)
,
Dominguez-Pumar M.
(Micro and Nano Technologies Group, Electronic Engineering Department, Universitat Politecnica de Catalunya, Jordi Girona 1-3, 08034 Barcelona, Spain)
資料名:
Microelectronics Reliability
(Microelectronics Reliability)
巻:
76-77
ページ:
635-639
発行年:
2017年
JST資料番号:
C0530A
ISSN:
0026-2714
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)