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J-GLOBAL ID:201702242727574684
整理番号:17A0795080
その場蒸着前プラズマ窒化とLPCVD-Si3N4ゲート絶縁体を有する超低V_thヒステリシスと電流コラプスのAlGaN/GaN MIS-HEMT【Powered by NICT】
AlGaN/GaN MIS-HEMTs of Very-Low ${V}_{¥sf {{th}}}$ Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator
著者 (17件):
Zhang Zhili
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China)
,
Li Weiyi
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China)
,
Fu Kai
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China)
,
Yu Guohao
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China)
,
Zhang Xiaodong
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China)
,
Zhao Yanfei
(Nano-X, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China)
,
Sun Shichuang
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China)
,
Song Liang
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China)
,
Deng Xuguang
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China)
,
Xing Zheng
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China)
,
Yang Lei
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China)
,
Ji Rongkun
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China)
,
Zeng Chunhong
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China)
,
Fan Yaming
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China)
,
Dong Zhihua
(School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China)
,
Cai Yong
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China)
,
Zhang Bao Shun
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
38
号:
2
ページ:
236-239
発行年:
2017年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)