文献
J-GLOBAL ID:201702242849948148
整理番号:17A0755635
スピンH all効果に駆動された磁気トンネル接合を用いた低貯蔵電力高速高密度不揮発性SRAM設計【Powered by NICT】
Low Store Power High-Speed High-Density Nonvolatile SRAM Design With Spin Hall Effect-Driven Magnetic Tunnel Junctions
著者 (4件):
Kang Wang
(Fert Beijing Institute, BDBC, School of Computer Science and Engineering, Beihang Univeristy, Beijing, China)
,
Lv Weifeng
(Fert Beijing Institute, BDBC, School of Computer Science and Engineering, Beihang Univeristy, Beijing, China)
,
Zhang Youguang
(Fert Beijing Institute, BDBC, and School of Electronic and Information Engineering, Beihang Univeristy, Beijing, China)
,
Zhao Weisheng
(Fert Beijing Institute, BDBC, and School of Electronic and Information Engineering, Beihang Univeristy, Beijing, China)
資料名:
IEEE Transactions on Nanotechnology
(IEEE Transactions on Nanotechnology)
巻:
16
号:
1
ページ:
148-154
発行年:
2017年
JST資料番号:
W1355A
ISSN:
1536-125X
CODEN:
ITNECU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)