文献
J-GLOBAL ID:201702242876429854
整理番号:17A0696913
二層グラフェン電界効果トランジスタに基づく室温,低インピーダンスと高感度テラヘルツ直接検出器【Powered by NICT】
Room-temperature, low-impedance and high-sensitivity terahertz direct detector based on bilayer graphene field-effect transistor
著者 (9件):
Qin Hua
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics (SINANO), Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, 215123, PR China)
,
Sun Jiandong
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics (SINANO), Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, 215123, PR China)
,
Liang Shixiong
(National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang, Hebei, 050051, PR China)
,
Li Xiang
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics (SINANO), Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, 215123, PR China)
,
Li Xiang
(School of Nano Technology and Nano Bionics, University of Science and Technology of China, Suzhou, 215123, PR China)
,
Yang Xinxin
(Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics (SINANO), Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, 215123, PR China)
,
He Zehao
(National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang, Hebei, 050051, PR China)
,
Yu Cui
(National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang, Hebei, 050051, PR China)
,
Feng Zhihong
(National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang, Hebei, 050051, PR China)
資料名:
Carbon
(Carbon)
巻:
116
ページ:
760-765
発行年:
2017年
JST資料番号:
H0270B
ISSN:
0008-6223
CODEN:
CRBNA
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)