文献
J-GLOBAL ID:201702243199647784
整理番号:17A0854869
分子ビームエピタキシャル成長させたNi_1+xTiSn薄膜の構造と電子的性質【Powered by NICT】
Structural and electronic properties of molecular beam epitaxially grown Ni1+xTiSn films
著者 (7件):
Rice A.D.
(Materials Department, University of California, Santa Barbara, CA 93106, USA)
,
Kawasaki J.K.
(Materials Department, University of California, Santa Barbara, CA 93106, USA)
,
Verma N.
(Materials Research Laboratory, University of California, Santa Barbara, CA 93106, USA)
,
Pennachio D.J.
(Materials Department, University of California, Santa Barbara, CA 93106, USA)
,
Schultz B.D.
(Department of Electrical & Computer Engineering, University of California, Santa Barbara, CA 93106, USA)
,
Palmstrom C.J.
(Materials Department, University of California, Santa Barbara, CA 93106, USA)
,
Palmstrom C.J.
(Department of Electrical & Computer Engineering, University of California, Santa Barbara, CA 93106, USA)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
467
ページ:
71-76
発行年:
2017年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)