文献
J-GLOBAL ID:201702243558318824
整理番号:17A0759449
Si基板上のAlGaN/GaN高電子移動度トランジスタ構造におけるAlGaNバッファ層のAl含有量の影響【Powered by NICT】
Influence of the Al content of the AlGaN buffer layer in AlGaN/GaN high-electron-mobility transistor structures on a Si substrate
著者 (8件):
Yamaoka Yuya
(Taiyo Nippon Sanso Corporation, 10 Ohkubo, Tsukuba, Ibaraki 300-2611, Japan)
,
Yamaoka Yuya
(Nagoya Institute of Technology, Gokiso-chou, Nagoya, Aichi 466-8555, Japan)
,
Kakamu Ken
(Nagoya Institute of Technology, Gokiso-chou, Nagoya, Aichi 466-8555, Japan)
,
Ubukata Akinori
(Taiyo Nippon Sanso Corporation, 10 Ohkubo, Tsukuba, Ibaraki 300-2611, Japan)
,
Yano Yoshiki
(Taiyo Nippon Sanso Corporation, 10 Ohkubo, Tsukuba, Ibaraki 300-2611, Japan)
,
Tabuchi Toshiya
(Taiyo Nippon Sanso Corporation, 10 Ohkubo, Tsukuba, Ibaraki 300-2611, Japan)
,
Matsumoto Koh
(Taiyo Nippon Sanso Corporation, 10 Ohkubo, Tsukuba, Ibaraki 300-2611, Japan)
,
Egawa Takashi
(Nagoya Institute of Technology, Gokiso-chou, Nagoya, Aichi 466-8555, Japan)
資料名:
Physica Status Solidi. A. Applications and Materials Science
(Physica Status Solidi. A. Applications and Materials Science)
巻:
214
号:
3
ページ:
ROMBUNNO.201600618
発行年:
2017年
JST資料番号:
D0774A
ISSN:
1862-6300
CODEN:
PSSABA
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)