文献
J-GLOBAL ID:201702243560842897
整理番号:17A0755592
ドープシリコンナノワイヤチャネル電界効果トランジスタバイオセンサの電気的特性【Powered by NICT】
Electrical Characteristics of Doped Silicon Nanowire Channel Field-Effect Transistor Biosensors
著者 (8件):
Rim Taiuk
(Department of Creative IT Engineering, Future IT Innovation Laboratory, Pohang University of Science and Technology, Pohang, South Korea)
,
Kim Kihyun
(Department of Creative IT Engineering, Future IT Innovation Laboratory, Pohang University of Science and Technology, Pohang, South Korea)
,
Cho Hyeonsu
(Department of Creative IT Engineering, Future IT Innovation Laboratory, Pohang University of Science and Technology, Pohang, South Korea)
,
Jeong Wooju
(Department of Electrical Engineering, Pohang University of Science and Technology, Pohang, South Korea)
,
Yoon Jun-Sik
(Department of Creative IT Engineering, Future IT Innovation Laboratory, Pohang University of Science and Technology, Pohang, South Korea)
,
Kim Yumi
(Department of Creative IT Engineering, Future IT Innovation Laboratory, Pohang University of Science and Technology, Pohang, South Korea)
,
Meyyappan M.
(NASA Ames Research Center, Moffet Field, CA, USA)
,
Baek Chang-Ki
(Department of Creative IT Engineering, Department of Electrical Engineering, Pohang University of Science and Technology, Pohang, South Korea)
資料名:
IEEE Sensors Journal
(IEEE Sensors Journal)
巻:
17
号:
3
ページ:
667-673
発行年:
2017年
JST資料番号:
W1318A
ISSN:
1530-437X
CODEN:
ISJEAZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)