文献
J-GLOBAL ID:201702243606560961
整理番号:17A0062098
表面形態とInP(100)基板上に成長させたGaSb/InGaAsタイプII量子ドットの光学的性質に及ぼす層間As In_xGa(1 x)の影響【Powered by NICT】
Effect of In_xGa_(1-x)As Interlayer on Surface Morphology and Optical Properties of GaSb/InGaAs Type-II Quantum Dots Grown on InP (100) Substrates
著者 (7件):
Chen Yulong
(Institute of Opto-Electronic Materials and Technology, South China Normal University)
,
Gao You
(Institute of Opto-Electronic Materials and Technology, South China Normal University)
,
Chen Hong
(Institute of Physics, Chinese Academy of Sciences)
,
Zhang Hui
(College of Physics and Optoelectric Engineering, Guangdong University of Technology)
,
He Miao
(Institute of Opto-Electronic Materials and Technology, South China Normal University)
,
Li Shuti
(Institute of Opto-Electronic Materials and Technology, South China Normal University)
,
Zheng Shuwen
(Institute of Opto-Electronic Materials and Technology, South China Normal University)
資料名:
Chinese Physics Letters
(Chinese Physics Letters)
巻:
33
号:
9
ページ:
098101-1-098101-4
発行年:
2016年
JST資料番号:
W1191A
ISSN:
0256-307X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)