文献
J-GLOBAL ID:201702244014650162
整理番号:17A0046667
金属-層間-半導体ソース/ドレインによるランダムドーパント変動誘起閾値電圧変動免疫性Ge FinFET
Random Dopant Fluctuation-Induced Threshold Voltage Variation-Immune Ge FinFET With Metal-Interlayer-Semiconductor Source/Drain
著者 (8件):
Shin Changho
(School of Electrical Engineering, Korea University, Seoul, South Korea)
,
Kim Jeong-Kyu
(School of Electrical Engineering, Korea University, Seoul, South Korea)
,
Kim Gwang-Sik
(School of Electrical Engineering, Korea University, Seoul, South Korea)
,
Lee Hyunjae
(School of Electrical and Computer Engineering, University of Seoul, Seoul, South Korea)
,
Shin Changhwan
(School of Electrical and Computer Engineering, University of Seoul, Seoul, South Korea)
,
Kim Jong-Kook
(School of Electrical Engineering, Korea University, Seoul, South Korea)
,
Cho Byung Jin
(School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea)
,
Yu Hyun-Yong
(School of Electrical Engineering, Korea University, Seoul, South Korea)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
63
号:
11
ページ:
4167-4172
発行年:
2016年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)