文献
J-GLOBAL ID:201702244679106976
整理番号:17A0492878
原子層堆積Al2O3と(100)InAsの界面におけるバンドオフセットとトラップ関連電子遷移
Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3
著者 (10件):
Chou H.-Y.
(Laboratory of Semiconductor Physics, Department of Physics, University of Leuven, Leuven, Belgium)
,
O’Connor E.
(Tyndall National Institute and Department of Chemistry, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland)
,
O’Mahony A.
(Tyndall National Institute and Department of Chemistry, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland)
,
Povey I. M.
(Tyndall National Institute and Department of Chemistry, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland)
,
Hurley P. K.
(Tyndall National Institute and Department of Chemistry, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland)
,
Dong Lin
(School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA)
,
Ye P. D.
(School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA)
,
Afanas’ev V. V.
(Laboratory of Semiconductor Physics, Department of Physics, University of Leuven, Leuven, Belgium)
,
Houssa M.
(Laboratory of Semiconductor Physics, Department of Physics, University of Leuven, Leuven, Belgium)
,
Stesmans A.
(Laboratory of Semiconductor Physics, Department of Physics, University of Leuven, Leuven, Belgium)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
120
号:
23
ページ:
235701-235701-7
発行年:
2016年12月21日
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)