文献
J-GLOBAL ID:201702244736860113
整理番号:17A0825289
4H-SiCバイポーラ回路のための高いガンマ線耐性【Powered by NICT】
High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits
著者 (8件):
Suvanam Sethu Saveda
(KTH Royal Institute of Technology, Kista, SE, Sweden)
,
Kuroki Shin-Ichiro
(Research Institute for Nanodevice and Bio Systems, Hiroshima University, Higashi-Hiroshima, Japan)
,
Lanni Luigia
(KTH Royal Institute of Technology, Kista, SE, Sweden)
,
Hadayati Raheleh
(KTH Royal Institute of Technology, Kista, SE, Sweden)
,
Ohshima Takeshi
(National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Japan)
,
Makino Takahiro
(National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Japan)
,
Hallen Anders
(KTH Royal Institute of Technology, Kista, SE, Sweden)
,
Zetterling Carl-Mikael
(KTH Royal Institute of Technology, Kista, SE, Sweden)
資料名:
IEEE Transactions on Nuclear Science
(IEEE Transactions on Nuclear Science)
巻:
64
号:
2
ページ:
852-858
発行年:
2017年
JST資料番号:
C0235A
ISSN:
0018-9499
CODEN:
IETNAE
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)