文献
J-GLOBAL ID:201702244823802403
整理番号:17A0375010
再版:ダイヤモンド上のGaNナノワイヤ【Powered by NICT】
Reprint of: GaN nanowires on diamond
著者 (5件):
Hetzl Martin
(Walter Schottky Institut and Physics Department, Technische Universitaet Muenchen, 85748 Garching, Germany)
,
Schuster Fabian
(Walter Schottky Institut and Physics Department, Technische Universitaet Muenchen, 85748 Garching, Germany)
,
Winnerl Andrea
(Walter Schottky Institut and Physics Department, Technische Universitaet Muenchen, 85748 Garching, Germany)
,
Weiszer Saskia
(Walter Schottky Institut and Physics Department, Technische Universitaet Muenchen, 85748 Garching, Germany)
,
Stutzmann Martin
(Walter Schottky Institut and Physics Department, Technische Universitaet Muenchen, 85748 Garching, Germany)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
55
ページ:
32-45
発行年:
2016年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)