文献
J-GLOBAL ID:201702245261677229
整理番号:17A0881668
スパッタしたAlN上に成長させたGaN膜の不純物取込に及ぼすAlN中間層の効果【Powered by NICT】
Effect of AlN interlayer on the impurity incorporation of GaN film grown on sputtered AlN
著者 (7件):
Chen Zhibin
(Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, China)
,
Zhang Jincheng
(Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, China)
,
Xu Shengrui
(Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, China)
,
Xue Junshuai
(Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, China)
,
Zhu Jiaduo
(Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, China)
,
Jiang Teng
(Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, China)
,
Hao Yue
(Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, China)
資料名:
Journal of Alloys and Compounds
(Journal of Alloys and Compounds)
巻:
710
ページ:
756-761
発行年:
2017年
JST資料番号:
D0083A
ISSN:
0925-8388
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)