文献
J-GLOBAL ID:201702245317779496
整理番号:17A0795074
NbドープTiO_2保護されたバックチャネルエッチした非晶質InGaZnO薄膜トランジスタ【Powered by NICT】
Nb Doped TiO2 Protected Back-Channel-Etched Amorphous InGaZnO Thin Film Transistors
著者 (7件):
Zhang Letao
(School of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University, Shenzhen, China)
,
Zhou Xiaoliang
(Institute of Microelectronics, Peking University, Beijing, China)
,
Yang Huan
(School of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University, Shenzhen, China)
,
He Hongyu
(School of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University, Shenzhen, China)
,
Wang Longyan
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong)
,
Zhang Min
(School of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University, Shenzhen, China)
,
Zhang Shengdong
(School of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University, Shenzhen, China)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
38
号:
2
ページ:
213-216
発行年:
2017年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)