文献
J-GLOBAL ID:201702245609541313
整理番号:17A0374621
エネルギー貯蔵デバイスに使用するための3次元ハニカム状窒素ドープグラフェンの形成【Powered by NICT】
Formation of three-dimensional honeycomb-like nitrogen-doped graphene for use in energy-storage devices
著者 (6件):
He Dongxu
(Institute of Applied Electrochemistry, State Key Laboratory of Electronic Thin Films and Integrated Devices, Institute of Microelectronics & Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
,
Wang Wenjian
(Institute of Applied Electrochemistry, State Key Laboratory of Electronic Thin Films and Integrated Devices, Institute of Microelectronics & Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
,
Fu Yufeng
(Institute of Applied Electrochemistry, State Key Laboratory of Electronic Thin Films and Integrated Devices, Institute of Microelectronics & Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
,
Zhao Rui
(Institute of Applied Electrochemistry, State Key Laboratory of Electronic Thin Films and Integrated Devices, Institute of Microelectronics & Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
,
Xue Weidong
(Institute of Applied Electrochemistry, State Key Laboratory of Electronic Thin Films and Integrated Devices, Institute of Microelectronics & Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
,
Hu Wencheng
(Institute of Applied Electrochemistry, State Key Laboratory of Electronic Thin Films and Integrated Devices, Institute of Microelectronics & Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
資料名:
Composites. Part A. Applied Science and Manufacturing
(Composites. Part A. Applied Science and Manufacturing)
巻:
91
号:
P1
ページ:
140-144
発行年:
2016年
JST資料番号:
E0231D
ISSN:
1359-835X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)