文献
J-GLOBAL ID:201702245865179508
整理番号:17A0852221
二重チャネルの高性能分割ゲートエンハンスUMOSFET【Powered by NICT】
High-Performance Split-Gate-Enhanced UMOSFET With Dual Channels
著者 (5件):
Wang Ying
(Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China)
,
Yu Cheng-Hao
(Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China)
,
Li Meng-Shi
(College of Information and communication Engineering, Harbin Engineering University, Harbin, China)
,
Cao Fei
(Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China)
,
Liu Yan-Juan
(College of Information and communication Engineering, Harbin Engineering University, Harbin, China)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
64
号:
4
ページ:
1455-1460
発行年:
2017年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)