文献
J-GLOBAL ID:201702246284726828
整理番号:17A0697165
H_2とN_2キャリアガス中の減圧CVDによる低欠陥と歪緩和GeSn成長の研究【Powered by NICT】
Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas
著者 (15件):
Margetis J.
(ASM, 3440 East University Drive, Phoenix, AZ 85034, USA)
,
Mosleh A.
(Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA)
,
Al-Kabi S.
(Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA)
,
Al-Kabi S.
(Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, USA)
,
Al-Kabi S.
(Department of Physics, Wasit University, Kut, Iraq)
,
Ghetmiri S.A.
(Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA)
,
Ghetmiri S.A.
(Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, USA)
,
Du W.
(Department of Chemistry & Physics, University of Arkansas at Pine Bluff, Pine Bluff, AR 71601, USA)
,
Dou W.
(Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA)
,
Benamara M.
(Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA)
,
Li B.
(Arktonics, LLC, 1339 South Pinnacle Drive, Fayetteville, AR 72701, USA)
,
Mortazavi M.
(Department of Chemistry & Physics, University of Arkansas at Pine Bluff, Pine Bluff, AR 71601, USA)
,
Naseem H.A.
(Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA)
,
Yu S.-Q.
(Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA)
,
Tolle J.
(ASM, 3440 East University Drive, Phoenix, AZ 85034, USA)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
463
ページ:
128-133
発行年:
2017年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)