文献
J-GLOBAL ID:201702246493086508
整理番号:17A0057889
温度場の最適化によるSiC上の大面積均一エピタキシャルグラフェン【Powered by NICT】
Large-area uniform epitaxial graphene on SiC by optimizing temperature field
著者 (10件):
Zhang Fusheng
(State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China)
,
Chen Xiufang
(State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China)
,
Yu Cancan
(State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China)
,
Sun Li
(State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China)
,
Xu Xiangang
(State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China)
,
Hu Xiaobo
(State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China)
,
Li Tian
(State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China)
,
Zhao Xian
(State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China)
,
Zhang Yong
(Collaborative Innovation Center for Global Energy Interconnection (Shandong), Jinan, 250061, P. R. China)
,
Wang Ruiqi
(Collaborative Innovation Center for Global Energy Interconnection (Shandong), Jinan, 250061, P. R. China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
SSLChina: IFWS
ページ:
54-57
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)