文献
J-GLOBAL ID:201702246948880270
整理番号:17A0462178
グラフェン-酸化物を添加したポリ(3,4-エチレンジオキシチオフェン):ポリ(スチレンスルホン酸)中間層を有するAl/p型Siショットキー整流器のショットキー障壁特性の改変
Modification of Schottky barrier properties of Al/p-type Si Schottky rectifiers with graphene-oxide-doped poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) interlayer
著者 (9件):
Janardhanam Vallivedu
(School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756, South Korea)
,
Jyothi Inapagundla
(School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756, South Korea)
,
Yuk Shim-Hoon
(School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756, South Korea)
,
Choi Chel-Jong
(School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756, South Korea)
,
Yun Hyung-Joong
(Advanced Nano Surface Research Group, Korea Basic Science Institute, Daejeon 305-806, South Korea)
,
Won Jonghan
(Advanced Nano Surface Research Group, Korea Basic Science Institute, Daejeon 305-806, South Korea)
,
Hong Won-Gi
(Nano-Bio Electron Microscopy Research Group, Korea Basic Science Institute, Daejeon 305-806, South Korea)
,
Lee Sung-Nam
(Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung 429-793, South Korea)
,
Rajagopal Reddy Varra
(Department of Physics, Sri Venkateswara University, Tirupati 517 502, India)
資料名:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
(Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
巻:
35
号:
2
ページ:
021212-021212-6
発行年:
2017年03月
JST資料番号:
E0974A
ISSN:
2166-2746
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)