文献
J-GLOBAL ID:201702247096714008
整理番号:17A0214293
新しいエピタキシャルリフトオフ(ELO)とドナーウエハ再利用によるモノリシック3DのためのSi上のIn_0In0.53Ga_0Ga0.47As上の絶縁体の費用効果的製造【Powered by NICT】
Cost-effective fabrication of In0.53Ga0.47As-on-insulator on Si for monolithic 3D via novel epitaxial lift-off (ELO) and donor wafer re-use
著者 (14件):
Kim Seong Kwang
(Korea Institute of Science and Technology (KIST), Korea)
,
Shim Jaephil
(Korea Institute of Science and Technology (KIST), Korea)
,
Geum Dae-Myeong
(Korea Institute of Science and Technology (KIST), Korea)
,
Kim Chang Zoo
(Korea Advanced NanoFab Center (KANC), Korea)
,
Kim Han-Sung
(Korea Institute of Science and Technology (KIST), Korea)
,
Kim Yeon-Su
(Korea Institute of Science and Technology (KIST), Korea)
,
Kang Hang-Kyu
(Korea Institute of Science and Technology (KIST), Korea)
,
Song Jin Dong
(Korea Institute of Science and Technology (KIST), Korea)
,
Choi Sung-Jin
(Kookmin University)
,
Kim Dae Hwan
(Kookmin University)
,
Choi Won Jun
(Korea Institute of Science and Technology (KIST), Korea)
,
Kim Hyung-jun
(Korea Institute of Science and Technology (KIST), Korea)
,
Kim Dong Myong
(Kookmin University)
,
Kim Sang Hyeon
(Korea Institute of Science and Technology (KIST), Korea)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
IEDM
ページ:
25.4.1-25.4.4
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)