文献
J-GLOBAL ID:201702247257929552
整理番号:17A0352474
酸素空格子点と金属AgフィラメントとAg/ZnO/Pt抵抗スイッチングメモリにおける単極と双極モードの共存【Powered by NICT】
Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments
著者 (8件):
Ma Hanlu
(Center for Advanced Optoelectronic Functional Materials Research,Northeast Normal University)
,
Wang Zhongqiang
(Center for Advanced Optoelectronic Functional Materials Research,Northeast Normal University)
,
Xu Haiyang
(Center for Advanced Optoelectronic Functional Materials Research,Northeast Normal University)
,
Zhang Lei
(Center for Advanced Optoelectronic Functional Materials Research,Northeast Normal University)
,
Zhao Xiaoning
(Center for Advanced Optoelectronic Functional Materials Research,Northeast Normal University)
,
Han Manshu
(Center for Advanced Optoelectronic Functional Materials Research,Northeast Normal University)
,
Ma Jiangang
(Center for Advanced Optoelectronic Functional Materials Research,Northeast Normal University)
,
Liu Yichun
(Center for Advanced Optoelectronic Functional Materials Research,Northeast Normal University)
資料名:
Chinese Physics B
(Chinese Physics B)
巻:
25
号:
12
ページ:
127303-1-127303-6
発行年:
2016年
JST資料番号:
W1539A
ISSN:
1674-1056
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)