文献
J-GLOBAL ID:201702247623631296
整理番号:17A0794896
STT-MRAMのための1Gb垂直磁気トンネル接合アレイにおける臨界デバイスパラメータの温度依存性【Powered by NICT】
Temperature Dependence of Critical Device Parameters in 1 Gb Perpendicular Magnetic Tunnel Junction Arrays for STT-MRAM
著者 (14件):
Park C.
(Qualcomm Technologies, Inc, San Diego, CA, USA)
,
Kan J. J.
(Qualcomm Technologies, Inc, San Diego, CA, USA)
,
Ching C.
(Silicon Systems Group, Applied Materials, Inc, Sunnyvale, CA, USA)
,
Ahn J.
(Silicon Systems Group, Applied Materials, Inc, Sunnyvale, CA, USA)
,
Xue L.
(Silicon Systems Group, Applied Materials, Inc, Sunnyvale, CA, USA)
,
Wang R.
(Silicon Systems Group, Applied Materials, Inc, Sunnyvale, CA, USA)
,
Kontos A.
(Silicon Systems Group, Applied Materials, Inc, Sunnyvale, CA, USA)
,
Liang S.
(Silicon Systems Group, Applied Materials, Inc, Sunnyvale, CA, USA)
,
Bangar M.
(Silicon Systems Group, Applied Materials, Inc, Sunnyvale, CA, USA)
,
Chen H.
(Silicon Systems Group, Applied Materials, Inc, Sunnyvale, CA, USA)
,
Hassan S.
(Silicon Systems Group, Applied Materials, Inc, Sunnyvale, CA, USA)
,
Kim S.
(Qualcomm Technologies, Inc, San Diego, CA, USA)
,
Pakala M.
(Silicon Systems Group, Applied Materials, Inc, Sunnyvale, CA, USA)
,
Kang S. H.
(Qualcomm Technologies, Inc, San Diego, CA, USA)
資料名:
IEEE Transactions on Magnetics
(IEEE Transactions on Magnetics)
巻:
53
号:
2
ページ:
ROMBUNNO.3400104.1-4
発行年:
2017年
JST資料番号:
A0339B
ISSN:
0018-9464
CODEN:
IEMGAQ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)