文献
J-GLOBAL ID:201702247846301579
整理番号:17A0666079
7nm技術ノードを超えてスケーリングのための傾斜イオン注入によるサブリソグラフィーパターン形成【Powered by NICT】
Sub-lithographic Patterning via Tilted Ion Implantation for Scaling Beyond the 7-nm Technology Node
著者 (7件):
Zheng Peng
(Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA)
,
Kim Sang Wan
(Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA)
,
Connelly Daniel
(Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA)
,
Kato Kimihiko
(Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA)
,
Ding Fei
(Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA)
,
Rubin Leonard
(Axcelis Technologies, Beverly, MA, USA)
,
Liu Tsu-Jae King
(Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
64
号:
1
ページ:
231-236
発行年:
2017年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)