文献
J-GLOBAL ID:201702248023355765
整理番号:17A0069726
化学蒸着法により,サファイア基板上に大面積の高品質の単層ジスルフィドを成長させることができた。【JST・京大機械翻訳】
Controllable Synthesis of High Quality Monolayer WS_2 with Large Size on Sapphire Substrate by Chemical Vapor Deposition
著者 (5件):
Gong Zhe
(Institute of Optoelectronic Technology,Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University,Ministry of Education)
,
He Dawei
(Institute of Optoelectronic Technology,Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University,Ministry of Education)
,
Wang Yongsheng
(Institute of Optoelectronic Technology,Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University,Ministry of Education)
,
Xu Haiteng
(Institute of Optoelectronic Technology,Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University,Ministry of Education)
,
Dong Yanfang
(Institute of Optoelectronic Technology,Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University,Ministry of Education)
資料名:
Faguang Xuebao
(Faguang Xuebao)
巻:
37
号:
8
ページ:
984-989
発行年:
2016年
JST資料番号:
W1380A
ISSN:
1000-7032
CODEN:
FAXUEW
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
中国語 (ZH)