文献
J-GLOBAL ID:201702248187590880
整理番号:17A0142354
受動,マルチレベルReRAMアレイのための読み出し回路の実際的考察【Powered by NICT】
Practical considerations of read-out circuits for passive, multi-level ReRAM arrays
著者 (6件):
Xing Jinling
(College of Electronic Science and Engineering, National University of Defense Technology, Changsha 410073, P. R. China)
,
Xu Hui
(College of Electronic Science and Engineering, National University of Defense Technology, Changsha 410073, P. R. China)
,
Li Jiwei
(College of Electronic Science and Engineering, National University of Defense Technology, Changsha 410073, P. R. China)
,
Wang Wei
(College of Electronic Science and Engineering, National University of Defense Technology, Changsha 410073, P. R. China)
,
Liu Haijun
(College of Electronic Science and Engineering, National University of Defense Technology, Changsha 410073, P. R. China)
,
Li Qingjiang
(College of Electronic Science and Engineering, National University of Defense Technology, Changsha 410073, P. R. China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
3M-NANO
ページ:
168-171
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)