文献
J-GLOBAL ID:201702248357305026
整理番号:17A0284698
ポリスチレンスルホネート薄膜によるシリコン表面のパッシベーション
Silicon surface passivation by polystyrenesulfonate thin films
著者 (9件):
Chen Jianhui
(Institute of Photovoltaics, College of Physics Science and Technology, Hebei University, Baoding 071002, China)
,
Shen Yanjiao
(Institute of Photovoltaics, College of Physics Science and Technology, Hebei University, Baoding 071002, China)
,
Guo Jianxin
(Institute of Photovoltaics, College of Physics Science and Technology, Hebei University, Baoding 071002, China)
,
Chen Bingbing
(Institute of Photovoltaics, College of Physics Science and Technology, Hebei University, Baoding 071002, China)
,
Fan Jiandong
(Institute of Photovoltaics, College of Physics Science and Technology, Hebei University, Baoding 071002, China)
,
Li Feng
(State Key Laboratory of Photovoltaic Materials & Technology, Yingli Green Energy Holding Co., Ltd., Baoding 071051, China)
,
Liu Haixu
(Institute of Photovoltaics, College of Physics Science and Technology, Hebei University, Baoding 071002, China)
,
Xu Ying
(Institute of Photovoltaics, College of Physics Science and Technology, Hebei University, Baoding 071002, China)
,
Mai Yaohua
(Institute of Photovoltaics, College of Physics Science and Technology, Hebei University, Baoding 071002, China)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
110
号:
8
ページ:
083904-083904-5
発行年:
2017年02月20日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)