文献
J-GLOBAL ID:201702248837674719
整理番号:17A1645854
六方晶窒化ホウ素クラスタを埋め込んだ2次元グラフェンFETの性能解析【Powered by NICT】
Performance analysis of 2D Graphene FET embedded with hexagonal boron nitride clusters
著者 (5件):
Banerjee Lopamudra
(School of VLSI Technology, Indian Institute of Engineering Science and Technology, Shibpur, Howrah - 711103, India)
,
Mukhopadhyay Arnab
(School of VLSI Technology, Indian Institute of Engineering Science and Technology, Shibpur, Howrah - 711103, India)
,
Sharma Bikash
(Nano device simulation laboratory, Department of ETCE, Jadavpur University, Kolkata - 700 032, India)
,
Sengupta Amretashis
(School of VLSI Technology, Indian Institute of Engineering Science and Technology, Shibpur, Howrah - 711103, India)
,
Rahaman Hafizur
(School of VLSI Technology, Indian Institute of Engineering Science and Technology, Shibpur, Howrah - 711103, India)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
DevIC
ページ:
491-494
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)