文献
J-GLOBAL ID:201702248846567541
整理番号:17A0969272
窒化けい素薄膜へのA LD Al_2O_3の直接結合【Powered by NICT】
Direct bonding of ALD Al2O3 to silicon nitride thin films
著者 (5件):
Lagana S.
(DTU Nanotech, Dept. of Micro and Nanotechnology, Technical University of Denmark, Orsteds Plads Building 345C, DK-2800 Kgs. Lyngby, Denmark)
,
Mikkelsen E.K.
(DTU Nanotech, Dept. of Micro and Nanotechnology, Technical University of Denmark, Orsteds Plads Building 345C, DK-2800 Kgs. Lyngby, Denmark)
,
Marie R.
(DTU Nanotech, Dept. of Micro and Nanotechnology, Technical University of Denmark, Orsteds Plads Building 345C, DK-2800 Kgs. Lyngby, Denmark)
,
Hansen O.
(DTU Nanotech, Dept. of Micro and Nanotechnology, Technical University of Denmark, Orsteds Plads Building 345C, DK-2800 Kgs. Lyngby, Denmark)
,
Molhave K.
(DTU Nanotech, Dept. of Micro and Nanotechnology, Technical University of Denmark, Orsteds Plads Building 345C, DK-2800 Kgs. Lyngby, Denmark)
資料名:
Microelectronic Engineering
(Microelectronic Engineering)
巻:
176
ページ:
71-74
発行年:
2017年
JST資料番号:
C0406B
ISSN:
0167-9317
CODEN:
MIENEF
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)