文献
J-GLOBAL ID:201702249242170914
整理番号:17A1019965
ハフニウム前配向層を持つ垂直配向したGaNナノ構造の選択領域成長【Powered by NICT】
Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer
著者 (10件):
Bae S.-Y.
(Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Aichi 464-8603, Japan)
,
Lekhal K.
(Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Aichi 464-8603, Japan)
,
Lee H.-J.
(Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya, Aichi 464-8603, Japan)
,
Mitsunari T.
(Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya, Aichi 464-8603, Japan)
,
Min J.-W.
(Department of Physics and Photon Science, Gwangju Institute of Science and Technology, Gwangju, Republic of Korea)
,
Lee D.-S.
(School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju, Republic of Korea)
,
Kushimoto M.
(Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya, Aichi 464-8603, Japan)
,
Honda Y.
(Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Aichi 464-8603, Japan)
,
Amano H.
(Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Aichi 464-8603, Japan)
,
Amano H.
(Akasaki Research Center, Nagoya University, Nagoya, Aichi 464-8603, Japan)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
468
ページ:
110-113
発行年:
2017年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)