文献
J-GLOBAL ID:201702249354901985
整理番号:17A0445177
高キャリア移動度を有するp型透明SnO単分子層の電子特性【Powered by NICT】
Electronic characteristics of p-type transparent SnO monolayer with high carrier mobility
著者 (6件):
Du Juan
(College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007, China)
,
Xia Congxin
(College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007, China)
,
Liu Yaming
(Henan Institute of Science and Technology, Xinxiang 453003, China)
,
Li Xueping
(College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007, China)
,
Peng Yuting
(Department of Physics, University of Texas at Arlington, TX 76019, USA)
,
Wei Shuyi
(College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan 453007, China)
資料名:
Applied Surface Science
(Applied Surface Science)
巻:
401
ページ:
114-119
発行年:
2017年
JST資料番号:
B0707B
ISSN:
0169-4332
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)