文献
J-GLOBAL ID:201702250668981016
整理番号:17A0462186
HfLaxTiyOz電荷捕獲層を有する金属-酸化物-半導体構造の不揮発性メモリの電気的および物理的特性
Electrical and physical characteristics of metal-oxide-semiconductor structured nonvolatile memory with HfLaxTiyOz charge trapping layers
著者 (3件):
Jeng Jin-Tsong
(Department of Computer Science and Information Engineering, National Formosa University, Yunlin 63201, Taiwan)
,
Li Yan-Lin
(Department of Computer Science and Information Engineering, National Formosa University, Yunlin 63201, Taiwan)
,
Cheng Chin-Lung
(Department of Electro-Optical Engineering, National Formosa University, Yunlin 63201, Taiwan)
資料名:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
(Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
巻:
35
号:
2
ページ:
022203-022203-8
発行年:
2017年03月
JST資料番号:
E0974A
ISSN:
2166-2746
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)