文献
J-GLOBAL ID:201702250807425764
整理番号:17A0539992
多重接合GaInP/GaAs/Ge太陽電池のためのInGaAs量子ドットベースの増強した光電流を伴うGaAsサブセル
InGaAs quantum well-dots based GaAs subcell with enhanced photocurrent for multijunction GaInP/GaAs/Ge solar cells
著者 (15件):
MINTAIROV S A
(Ioffe Physical-Techical Inst., St Petersburg, RUS)
,
MINTAIROV S A
(St Petersburg Academic Univ., St Petersburg, RUS)
,
MINTAIROV S A
(Solar Dots Ltd, St Petersburg, RUS)
,
KALYUZHNYY N A
(Ioffe Physical-Techical Inst., St Petersburg, RUS)
,
KALYUZHNYY N A
(St Petersburg Academic Univ., St Petersburg, RUS)
,
KALYUZHNYY N A
(Peter the Great St. Petersburg Polytechnic Univ., St. Petersburg, RUS)
,
MAXIMOV M V
(Ioffe Physical-Techical Inst., St Petersburg, RUS)
,
MAXIMOV M V
(St Petersburg Academic Univ., St Petersburg, RUS)
,
MAXIMOV M V
(Peter the Great St. Petersburg Polytechnic Univ., St. Petersburg, RUS)
,
NADTOCHIY A M
(Ioffe Physical-Techical Inst., St Petersburg, RUS)
,
NADTOCHIY A M
(St Petersburg Academic Univ., St Petersburg, RUS)
,
NADTOCHIY A M
(Solar Dots Ltd, St Petersburg, RUS)
,
ZHUKOV A E
(St Petersburg Academic Univ., St Petersburg, RUS)
,
ZHUKOV A E
(Solar Dots Ltd, St Petersburg, RUS)
,
ZHUKOV A E
(Peter the Great St. Petersburg Polytechnic Univ., St. Petersburg, RUS)
資料名:
Semiconductor Science and Technology
(Semiconductor Science and Technology)
巻:
32
号:
1
ページ:
015006,1-4
発行年:
2017年01月
JST資料番号:
E0503B
ISSN:
0268-1242
CODEN:
SSTEET
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)