文献
J-GLOBAL ID:201702251068189624
整理番号:17A0400961
Ge成長速度の影響とSi(100)基板上のC Geドットの形成に及ぼす温度【Powered by NICT】
Effects of Ge growth rate and temperature on C-mediated Ge dot formation on Si (100) substrate
著者 (4件):
Satoh Yuhki
(Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, Sendai, Miyagi 980-8579, Japan)
,
Itoh Yuhki
(Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, Sendai, Miyagi 980-8579, Japan)
,
Kawashima Tomoyuki
(Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, Sendai, Miyagi 980-8579, Japan)
,
Washio Katsuyoshi
(Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, Sendai, Miyagi 980-8579, Japan)
資料名:
Thin Solid Films
(Thin Solid Films)
巻:
621
ページ:
42-46
発行年:
2017年
JST資料番号:
B0899A
ISSN:
0040-6090
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)