文献
J-GLOBAL ID:201702251327258246
整理番号:17A0222637
少数層MoS2FETへの高k誘電体超薄膜の統合法の改善:リモートフォーミングガスプラズマ前処理による
Improved integration of ultra-thin high-k dielectrics in few-layer MoS2 FET by remote forming gas plasma pretreatment
著者 (7件):
Wang Xiao
(State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People’s Republic of China)
,
Zhang Tian-Bao
(State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People’s Republic of China)
,
Yang Wen
(State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People’s Republic of China)
,
Zhu Hao
(State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People’s Republic of China)
,
Chen Lin
(State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People’s Republic of China)
,
Sun Qing-Qing
(State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People’s Republic of China)
,
Zhang David Wei
(State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People’s Republic of China)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
110
号:
5
ページ:
053110-053110-5
発行年:
2017年01月30日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)