文献
J-GLOBAL ID:201702251366114121
整理番号:17A0135144
Mgドープ超ワイドバンドギャップAlNナノ構造に関する高効率p型伝導の機構
On the mechanism of highly efficient p-type conduction of Mg-doped ultra-wide-bandgap AlN nanostructures
著者 (4件):
Tran Nhung Hong
(Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada)
,
Le Binh Huy
(Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada)
,
Zhao Songrui
(Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada)
,
Mi Zetian
(Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
110
号:
3
ページ:
032102-032102-5
発行年:
2017年01月16日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)