文献
J-GLOBAL ID:201702251371909094
整理番号:17A1546293
p型シリコンにおける電子ビーム蒸着により導入された欠陥の熱安定性【Powered by NICT】
Thermal stability of defects introduced by electron beam deposition in p-type silicon
著者 (6件):
Danga H.T.
(Department of Physics, University of Pretoria, Pretoria 0002, South Africa)
,
Auret F.D.
(Department of Physics, University of Pretoria, Pretoria 0002, South Africa)
,
Tunhuma S.M.
(Department of Physics, University of Pretoria, Pretoria 0002, South Africa)
,
Omotoso E.
(Department of Physics, University of Pretoria, Pretoria 0002, South Africa)
,
Igumbor E.
(Department of Physics, University of Pretoria, Pretoria 0002, South Africa)
,
Meyer W.E.
(Department of Physics, University of Pretoria, Pretoria 0002, South Africa)
資料名:
Nuclear Instruments & Methods in Physics Research. Section B. Beam Interactions with Materials and Atoms
(Nuclear Instruments & Methods in Physics Research. Section B. Beam Interactions with Materials and Atoms)
巻:
409
ページ:
46-49
発行年:
2017年
JST資料番号:
H0899A
ISSN:
0168-583X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)