文献
J-GLOBAL ID:201702251529101666
整理番号:17A0214307
実質的無制限耐久性を用いたサブ10nmに埋め込まれたSTT-MRAMのための2x nm直径の垂直MTJアレイとMgO障壁の系統的検証【Powered by NICT】
Systematic validation of 2x nm diameter perpendicular MTJ arrays and MgO barrier for sub-10 nm embedded STT-MRAM with practically unlimited endurance
著者 (14件):
Kan J. J.
(Qualcomm Technologies, Inc., San Diego, California 92121, USA)
,
Park C.
(Qualcomm Technologies, Inc., San Diego, California 92121, USA)
,
Ching C.
(Applied Materials, Inc., Sunnyvale, California 94085, USA)
,
Ahn J.
(Applied Materials, Inc., Sunnyvale, California 94085, USA)
,
Xue L.
(Applied Materials, Inc., Sunnyvale, California 94085, USA)
,
Wang R.
(Applied Materials, Inc., Sunnyvale, California 94085, USA)
,
Kontos A.
(Applied Materials, Inc., Sunnyvale, California 94085, USA)
,
Liang S.
(Applied Materials, Inc., Sunnyvale, California 94085, USA)
,
Bangar M.
(Applied Materials, Inc., Sunnyvale, California 94085, USA)
,
Chen H.
(Applied Materials, Inc., Sunnyvale, California 94085, USA)
,
Hassan S.
(Applied Materials, Inc., Sunnyvale, California 94085, USA)
,
Kim S.
(Qualcomm Technologies, Inc., San Diego, California 92121, USA)
,
Pakala M.
(Applied Materials, Inc., Sunnyvale, California 94085, USA)
,
Kang S. H.
(Qualcomm Technologies, Inc., San Diego, California 92121, USA)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
IEDM
ページ:
27.4.1-27.4.4
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)