文献
J-GLOBAL ID:201702251771584740
整理番号:17A1465201
低温マイクロ波アニールしたニッケル,イッテルビウム,およびチタンシリサイドを用いた金属Schottky障壁ソース/ドレインナノワイヤトランジスタ【Powered by NICT】
Metallic Schottky barrier source/drain nanowire transistors using low-temperature microwave annealed nickel, ytterbium, and titanium silicidation
著者 (6件):
Shih Chun-Hsing
(Department of Electrical Engineering, National Chi Nan University, Nantou 54561, Taiwan)
,
Huang Ming-Kun
(Department of Electrical Engineering, National Chi Nan University, Nantou 54561, Taiwan)
,
Tsai Jr-Jie
(Department of Electrical Engineering, National Chi Nan University, Nantou 54561, Taiwan)
,
Chen Yu-Hsuan
(Department of Electrical Engineering, National Chi Nan University, Nantou 54561, Taiwan)
,
Chen Yu-Hsuan
(Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan)
,
Wu Wen-Fa
(National Nano Device Laboratories, Hsinchu 30013, Taiwan)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
70
ページ:
272-278
発行年:
2017年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)