文献
J-GLOBAL ID:201702251957434970
整理番号:17A0475061
成長中のドーピング半導体ナノワイヤの進歩【Powered by NICT】
Progress in doping semiconductor nanowires during growth
著者 (6件):
Dayeh Shadi A.
(Integrated Electronics and Biointerfaces Laboratory, Department of Electrical and Computer Engineering, University of California, San Diego, 9500 Gilman Dr., La Jolla, CA 92093, USA)
,
Dayeh Shadi A.
(Materials Science and Engineering Program, University of California, San Diego, 9500 Gilman Dr., La Jolla, CA 92093, USA)
,
Dayeh Shadi A.
(Department of NanoEngineering, University of California, San Diego, 9500 Gilman Dr., La Jolla, CA 92093, USA)
,
Chen Renjie
(Integrated Electronics and Biointerfaces Laboratory, Department of Electrical and Computer Engineering, University of California, San Diego, 9500 Gilman Dr., La Jolla, CA 92093, USA)
,
Ro Yun Goo
(Integrated Electronics and Biointerfaces Laboratory, Department of Electrical and Computer Engineering, University of California, San Diego, 9500 Gilman Dr., La Jolla, CA 92093, USA)
,
Sim Joonseop
(Integrated Electronics and Biointerfaces Laboratory, Department of Electrical and Computer Engineering, University of California, San Diego, 9500 Gilman Dr., La Jolla, CA 92093, USA)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
62
ページ:
135-155
発行年:
2017年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)