文献
J-GLOBAL ID:201702251977437313
整理番号:17A0362444
導電性A FMを用いたHfO_2RRAMにおける量子コンダクタンス,読出し妨害とスイッチング統計の解析【Powered by NICT】
Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM
著者 (7件):
Ranjan A.
(Engineering Product Development Pillar, Singapore University of Technology and Design (SUTD), 487 372, Singapore)
,
Ranjan A.
(Institute of Materials Research and Engineering (IMRE), A*STAR, 2 Fusionopolis Way, 138 634, Singapore)
,
Raghavan N.
(Engineering Product Development Pillar, Singapore University of Technology and Design (SUTD), 487 372, Singapore)
,
Molina J.
(Electronics Department, National Institute of Astrophysics, Optics and Electronics (NIAOE), 72840, Mexico)
,
O’Shea S.J.
(Institute of Materials Research and Engineering (IMRE), A*STAR, 2 Fusionopolis Way, 138 634, Singapore)
,
Shubhakar K.
(Engineering Product Development Pillar, Singapore University of Technology and Design (SUTD), 487 372, Singapore)
,
Pey K.L.
(Engineering Product Development Pillar, Singapore University of Technology and Design (SUTD), 487 372, Singapore)
資料名:
Microelectronics Reliability
(Microelectronics Reliability)
巻:
64
ページ:
172-178
発行年:
2016年
JST資料番号:
C0530A
ISSN:
0026-2714
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)