文献
J-GLOBAL ID:201702252189912166
整理番号:17A1254711
超薄状InGaAs-OI MOSトランジスタにおける電子移動度の歪に誘起された増加【Powered by NICT】
Strain-induced increase of electron mobility in ultra-thin InGaAs-OI MOS transistors
著者 (3件):
Krivec Sabina
(Department of Electronics, Microelectronics, Computer and Intelligent Systems, Faculty of Electrical Engineering and Computing, University of Zagreb, HR-10000, Croatia)
,
Poljak Mirko
(Department of Electronics, Microelectronics, Computer and Intelligent Systems, Faculty of Electrical Engineering and Computing, University of Zagreb, HR-10000, Croatia)
,
Suligoj Tomislav
(Department of Electronics, Microelectronics, Computer and Intelligent Systems, Faculty of Electrical Engineering and Computing, University of Zagreb, HR-10000, Croatia)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
EUROSOI-ULIS
ページ:
136-139
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)