文献
J-GLOBAL ID:201702252274984687
整理番号:17A0369738
p Si/n Zn_0.9Mg_0 1O/n ZnOヘテロ接合における電流輸送と深い準位【Powered by NICT】
Current transport and deep levels in p-Si/n-Zn0.9Mg0.1O/n-ZnO heterojunction
著者 (5件):
Paradowska K.M.
(Department of Quantum Technologies, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland)
,
Placzek-Popko E.
(Department of Quantum Technologies, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland)
,
Pietrzyk M.A.
(Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland)
,
Gwozdz K.
(Department of Quantum Technologies, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland)
,
Kozanecki A.
(Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland)
資料名:
Journal of Alloys and Compounds
(Journal of Alloys and Compounds)
巻:
691
ページ:
946-951
発行年:
2017年
JST資料番号:
D0083A
ISSN:
0925-8388
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)