文献
J-GLOBAL ID:201702252499148067
整理番号:17A0443944
硫黄-セレン傾斜太陽電池吸収体を達成するための経路としての化合物同時スパッタCu_2ZnSnS_4のセレンアニーリングへの実用的限界【Powered by NICT】
Practical limitations to selenium annealing of compound co-sputtered Cu2ZnSnS4 as a route to achieving sulfur-selenium graded solar cell absorbers
著者 (6件):
Ross N.
(Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, P. O. Box 1048 Blindern, Oslo N-0316, Norway)
,
Ross N.
(Ångstrom Laboratory, Div. Solid State Electronics, Department of Engineering Science, Uppsala University, Box 534, Uppsala SE-75121, Sweden)
,
Larsen J.
(Ångstrom Laboratory, Div. Solid State Electronics, Department of Engineering Science, Uppsala University, Box 534, Uppsala SE-75121, Sweden)
,
Grini S.
(Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, P. O. Box 1048 Blindern, Oslo N-0316, Norway)
,
Vines L.
(Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, P. O. Box 1048 Blindern, Oslo N-0316, Norway)
,
Platzer-Bjorkman C.
(Ångstrom Laboratory, Div. Solid State Electronics, Department of Engineering Science, Uppsala University, Box 534, Uppsala SE-75121, Sweden)
資料名:
Thin Solid Films
(Thin Solid Films)
巻:
623
ページ:
110-115
発行年:
2017年
JST資料番号:
B0899A
ISSN:
0040-6090
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)