文献
J-GLOBAL ID:201702252732110038
整理番号:17A0830155
軽不純物(C,O)を含む多結晶純粋シリコンおよびシリコン中の成長過冷却【Powered by NICT】
Growth undercooling in multi-crystalline pure silicon and in silicon containing light impurities (C and O)
著者 (7件):
Riberi-Beridot T.
(Aix Marseille Univ, CNRS, IM2NP UMR CNRS 7334, Campus Saint Jerome, Case 142, 13397 Marseille Cedex 20, France)
,
Tsoutsouva M.G.
(Aix Marseille Univ, CNRS, IM2NP UMR CNRS 7334, Campus Saint Jerome, Case 142, 13397 Marseille Cedex 20, France)
,
Regula G.
(Aix Marseille Univ, CNRS, IM2NP UMR CNRS 7334, Campus Saint Jerome, Case 142, 13397 Marseille Cedex 20, France)
,
Reinhart G.
(Aix Marseille Univ, CNRS, IM2NP UMR CNRS 7334, Campus Saint Jerome, Case 142, 13397 Marseille Cedex 20, France)
,
Perichaud I.
(Aix Marseille Univ, CNRS, IM2NP UMR CNRS 7334, Campus Saint Jerome, Case 142, 13397 Marseille Cedex 20, France)
,
Baruchel J.
(ESRF, 71, Avenue des Martyrs, CS40220, 38043 Grenoble Cedex 9, France)
,
Mangelinck-Noeel N.
(Aix Marseille Univ, CNRS, IM2NP UMR CNRS 7334, Campus Saint Jerome, Case 142, 13397 Marseille Cedex 20, France)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
466
ページ:
64-70
発行年:
2017年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)