文献
J-GLOBAL ID:201702252964278643
整理番号:17A0399722
強赤方偏移発光バンドをもつInGaN/GaN多重量子井戸におけるキャリア局在化に及ぼす成長温度の影響【Powered by NICT】
Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band
著者 (7件):
Mickevicius J.
(Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio al. 3, LT-10257 Vilnius, Lithuania)
,
Dobrovolskas D.
(Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio al. 3, LT-10257 Vilnius, Lithuania)
,
Aleksiejunas R.
(Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio al. 3, LT-10257 Vilnius, Lithuania)
,
Nomeika K.
(Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio al. 3, LT-10257 Vilnius, Lithuania)
,
Grinys T.
(Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio al. 3, LT-10257 Vilnius, Lithuania)
,
Kadys A.
(Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio al. 3, LT-10257 Vilnius, Lithuania)
,
Tamulaitis G.
(Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio al. 3, LT-10257 Vilnius, Lithuania)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
459
ページ:
173-177
発行年:
2017年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)