文献
J-GLOBAL ID:201702253206015341
整理番号:17A1563548
超高速相変化メモリ応用のためのSiO_2ドーピングによるSb材料の熱安定性の改善【Powered by NICT】
Improved thermal stability of Sb materials by SiO2 doping for ultra-fast phase change memory application
著者 (8件):
Hu Yifeng
(School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213001, China)
,
Hu Yifeng
(State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China)
,
Zhu Xiaoqin
(School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213001, China)
,
Zou Hua
(School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213001, China)
,
You Haipeng
(School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213001, China)
,
Shen Dahua
(School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213001, China)
,
Song Sannian
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China)
,
Song Zhitang
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China)
資料名:
Journal of Alloys and Compounds
(Journal of Alloys and Compounds)
巻:
727
ページ:
986-990
発行年:
2017年
JST資料番号:
D0083A
ISSN:
0925-8388
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)